TP-A3 Capless Annealing of GaAs Using a Controlled Excess as Vapor Pressure Source
- H. Rupprecht
- J. Woodall
- 1980
- IEEE T-ED
Paper
Publications
18 results for H. Rupprecht
Stimulated Emission from Ga1-xA1xAs Diodes at 77 °K
- H. Rupprecht
- G.D. Pettit
- et al.
- 1968
- IEEE JQE
PaperEfficient electroluminescence from GaAs diodes at 300°K
- H. Rupprecht
- J. Woodall
- et al.
- 1966
- Applied Physics Letters
PaperEffect of deep levels on the optical and electrical properties of copper-doped GaAs p-n junctions
- T.N. Morgan
- M.H. Pilkuhn
- et al.
- 1965
- Physical Review
PaperThe Effect of Deep Levels due to Copper on the Optical and Electrical Properties of GaAs p-n Junctions
- M.H. Pilkuhn
- H. Rupprecht
- 1964
- IEEE T-ED
PaperEffect of temperature on the stimulated emission from GaAs p-n junctions
- M.H. Pilkuhn
- H. Rupprecht
- et al.
- 1964
- Solid-State Electronics
PaperContinuous Stimulated Emission from GaAs Diodes at 77°K
- M.H. Pilkuhn
- H. Rupprecht
- et al.
- 1963
- Proceedings of the IEEE
PaperA Relation Between the Current Density at Threshold and the Length of Fabry-Perot Type GaAs Lasers
- M.H. Pilkuhn
- H. Rupprecht
- 1963
- Proceedings of the IEEE
Paper