PaperProcessing and reconstruction effects on Al-GaAs(100) barrier heightsI.M. Vitomirov, A. Raisanen, et al.Journal of Electronic Materials
PaperLocal bonding and electronic structure obtained from electron energy loss scatteringP.E. Batson, K.L. Kavanagh, et al.Ultramicroscopy
PaperElectron-energy-loss scattering near a single misfit dislocation at the GaAs/GaInAs interfaceP.E. Batson, K.L. Kavanagh, et al.Physical Review Letters
Conference paperOptoelectronic applications of GaAs epilayers containing arsenic precipitatesAlan C. Warren, J. Woodall, et al.IEE/LEOS Summer Topical Meetings 1991