Proceedings of the IEEE

Paper

01 Jan 1963

A Relation Between the Current Density at Threshold and the Length of Fabry-Perot Type GaAs Lasers

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Abstract

No abstract available.

Paper

TP-A3 Capless Annealing of GaAs Using a Controlled Excess as Vapor Pressure Source

H. Rupprecht, J. Woodall

IEEE T-ED

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Spontaneous and stimulated emission from gaas diodes with three-layer structures

M.H. Pilkuhn, H. Rupprecht

Journal of Applied Physics

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High-energy light emission from junctions in GaAs_xP _1-x diodes

N.G. Ainslie, M.H. Pilkuhn, et al.

Journal of Applied Physics

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Spontaneous and stimulated emission from gaas diodes with three-layer structures

M.H. Pilkuhn, H. Rupprecht

Journal of Applied Physics

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