PaperA Relation Between the Current Density at Threshold and the Length of Fabry-Perot Type GaAs LasersM.H. Pilkuhn, H. RupprechtProceedings of the IEEE
PaperEfficient visible electroluminescence at 300°K from Ga 1-xAlxAs p-n junctions grown by liquid-phase epitaxyH. Rupprecht, J. Woodall, et al.Applied Physics Letters
PaperContinuous Stimulated Emission from GaAs Diodes at 77°KM.H. Pilkuhn, H. Rupprecht, et al.Proceedings of the IEEE
PaperSpontaneous and stimulated emission from gaas diodes with three-layer structuresM.H. Pilkuhn, H. RupprechtJournal of Applied Physics
