Publications

18 results for H. Rupprecht

Efficient visible electroluminescence at 300°K from Ga _1-xAl_xAs p-n junctions grown by liquid-phase epitaxy
- - H. Rupprecht
  - J. Woodall
  - et al.
- 2004
- Applied Physics Letters
Distribution of boron-induced defects in shallow diffused surface layers of silicon
- - H. Rupprecht
  - G.H. Schwuttke
- 2004
- Journal of Applied Physics
Diffusion of Zn into GaAs under the presence of excess arsenic vapor
- - H. Rupprecht
  - C.Z. Lemay
- 2004
- Journal of Applied Physics
High-energy light emission from junctions in GaAs_xP _1-x diodes
- - N.G. Ainslie
  - M.H. Pilkuhn
  - et al.
- 2004
- Journal of Applied Physics
Electroluminescence and lasing action in GaAs_xP_1-x
- - M.H. Pilkuhn
  - H. Rupprecht
- 2004
- Journal of Applied Physics
Optical and electrical properties of epitaxial and diffused gaas injection lasers
- - M.H. Pilkuhn
  - H. Rupprecht
- 2004
- Journal of Applied Physics
Spontaneous and stimulated emission from gaas diodes with three-layer structures
- - M.H. Pilkuhn
  - H. Rupprecht
- 2004
- Journal of Applied Physics
Electron microscope studies of an alloyed Au/Ni/Au-Ge ohmic contact to GaAs
- - T.S. Kuan
  - P.E. Batson
  - et al.
- 1983
- Journal of Applied Physics
Proximate capless annealing of GaAs using a controlled-excess As vapor pressure source
- - J. Woodall
  - H. Rupprecht
  - et al.
- 1981
- Applied Physics Letters
IVA-7 Surface Layer Impurity Accumulation Due to Evaporation of GaAs During Annealing
- - J. Woodall
  - H. Rupprecht
  - et al.
- 1981
- IEEE T-ED