Zhen Zhang, Siyuranga Obasa Koswatta, et al.
IEEE Electron Device Letters
Paper
Sharp reduction of contact resistivities by effective schottky barrier lowering with silicides as diffusion sources
Abstract
An extremely low contact resistivity of 6-7 × 10-9 Ωċcm2 between Ni0.9Pt0.1Si and heavily doped Si is achieved through Schottky barrier engineering by dopant segregation. In this scheme, the implantation of B or As is performed into silicide followed by a low-temperature drive-in anneal. Reduction of effective Schottky barrier height is manifested in the elimination of nonlinearities in IV characteristics. © 2010 IEEE.
Related
Kangguo Cheng, A. Khakifirooz, et al.
VLSI Technology 2011
Fei Liu, Zhen Zhang, et al.
IEEE Electron Device Letters
Qitao Hu, Paul Solomon, et al.
Nature Communications