Publications

15 results for Kam-Leung Lee

Sub-25nm FinFET with advanced fin formation and short channel effect engineering
- - Tenko Yamashita
  - Veeraraghvan S. Basker
  - et al.
- 2011
- VLSI Technology 2011
Impact of diffusionless anneal using dynamic surface anneal on the electrical properties of a high-k/metal gate stack in metal-oxide-semiconductor devices
- - Changhwan Choi
  - Kam-Leung Lee
  - et al.
- 2011
- Applied Physics Letters
Effective schottky barrier lowering for contact resistivity reduction using silicides as diffusion sources
- - Zhen Zhang
  - F. Pagette
  - et al.
- 2010
- VLSI-TSA 2010
Sub-20 nm abrupt USJ formation with long ms-flash with sub-2 nm dopant motion control
- - Kam-Leung Lee
  - Isaac Lauer
  - et al.
- 2010
- IWJT 2010
Sharp reduction of contact resistivities by effective schottky barrier lowering with silicides as diffusion sources
- - Zhen Zhang
  - F. Pagette
  - et al.
- 2010
- IEEE Electron Device Letters
High-κ/metal-gate fully depleted SOI CMOS with single-silicide schottky source/drain with sub-30-nm gate length
- - Marwan H. Khater
  - Zhen Zhang
  - et al.
- 2010
- IEEE Electron Device Letters
Self-Aligned n-Channel Germanium MOSFETs With a Thin Ge Oxynitride Gate Dielectric and Tungsten Gate
- - Hulling Shang
  - Kam-Leung Lee
  - et al.
- 2004
- IEEE Electron Device Letters
20 nm N ⁺ abrupt junction formation in Strained Si/Si _1-xGe _x MOS device
- - K.L. Lee
  - F. Cardone
  - et al.
- 2003
- IEDM 2003
Sub-30 nm P⁺ abrupt junction formation in strained Si/Si_1-xGe_x MOS device
- - K.L. Lee
  - J.O. Chu
  - et al.
- 2002
- IEDM 2002
Metal-gate FinFET and fully-depleted SOI devices using total gate silicidation
- - Jakub Kedzierski
  - Edward Nowak
  - et al.
- 2002
- IEDM 2002