Publications

46 results for Dae-Gyu Park

Resistivity of copper interconnects at 28 nm pitch and copper cross-sectional area below 100 nm²
- - Adam Pyzyna
  - Hsinyu Tsai
  - et al.
- 2017
- IITC 2017
Ge-on-insulator lateral bipolar transistors
- - Jeng-Bang Yau
  - Joonah Yoon
  - et al.
- 2016
- BCTM 2016
Prospects of high-Ge-content strained SiGe for advanced FinFET generations
- - Pouya Hashemi
  - Karthik Balakrishnan
  - et al.
- 2016
- PRiME/ECS Meeting 2016
Replacement high-K/metal-gate High-Ge-content strained SiGe FinFETs with high hole mobility and excellent SS and reliability at aggressive EOT ∼7Å and scaled dimensions down to sub-4nm fin widths
- - Pouya Hashemi
  - Takashi Ando
  - et al.
- 2016
- VLSI Technology 2016
Demonstration of record SiGe transconductance and short-channel current drive in High-Ge-Content SiGe PMOS FinFETs with improved junction and scaled EOT
- - Pouya Hashemi
  - Kam-Leung Lee
  - et al.
- 2016
- VLSI Technology 2016
SiGe-on-insulator symmetric lateral bipolar transistors
- - Jeng-Bang Yau
  - Jin Cai
  - et al.
- 2015
- S3S 2015
High-mobility high-Ge-content Si_1-xGe_x-OI PMOS FinFETs with fins formed using 3D germanium condensation with Ge fraction up to x∼ 0.7, scaled EOT∼8.5Å and ∼10nm fin width
- - Pouya Hashemi
  - Takashi Ando
  - et al.
- 2015
- VLSI Circuits 2015
Resistivity of copper interconnects beyond the 7 nm node
- - Adam Pyzyna
  - Robert L. Bruce
  - et al.
- 2015
- VLSI Technology 2015
High-mobility High-Ge-Content Si_1-xGe_x-OI PMOS FinFETs with fins formed using 3D germanium condensation with Ge fraction up to x∼ 0.7, scaled EOT∼8.5Å and ∼10nm fin width
- - Pouya Hashemi
  - Takashi Ando
  - et al.
- 2015
- VLSI Technology 2015
Strained-SiGe channel FinFETs for high-performance CMOS: Opportunities and challenges
- - Pouya Hashemi
  - Karthik Balakrishnan
  - et al.
- 2015
- ECS Meeting 2015 Chicago