Publications

11 results at International Journal of Electronics

High-density data-retention power gating structure using a four-terminal double-gate device
- - K. Kim
  - K. Das
  - et al.
- 2007
- International Journal of Electronics
Transient analysis of electrical charge injection into charge-coupled devices
- - S.G. Chamberlain
  - B.Y. Woo
- 2007
- International Journal of Electronics
A floating-body charge monitoring technique for partially depleted SOI technology
- - J.B. Kuang
  - M.J. Saccamango
  - et al.
- 2004
- International Journal of Electronics
Compact modeling methodology of strained-Si channel-on-insulator (SSOI) MOSFETs
- - Keunwoo Kim
  - Ching-Te Chuang
  - et al.
- 2004
- International Journal of Electronics
Process/physics-based threshold voltage model for nano-scaled double-gate devices
- - Keunwoo Kim
  - Jerry G. Fossum
  - et al.
- 2004
- International Journal of Electronics
Hysteresis effect in floating-body partially depleted SOI CMOS domino circuits
- - Ruchir Puri
  - Ching-Te Chuang
- 2003
- International Journal of Electronics
Performance analysis of tapered gate in PD/SOI CMOS technology
- - W. Hwang
  - C.T. Chuang
  - et al.
- 2002
- International Journal of Electronics
Dual-mode parasitic bipolar effect in dynamic CVSL XOR circuit with floating-body partially depleted SOI devices
- - C.T. Chuang
  - P.F. Lu
  - et al.
- 1999
- International Journal of Electronics
Metastability of SOI CMOS latches
- - Christophe R. Tretz
  - C.T. Chuang
  - et al.
- 1999
- International Journal of Electronics
Number format conversion: Algorithm and VLSI module generator
- - N.A. Kyrloglou
  - O.G. Koufopavlou
  - et al.
- 1992
- International Journal of Electronics