Self-Aligned Bipolar Epitaxial Base n-p-n Transistors by Selective Epitaxy Emitter Window (SEEW) Technology
- Joachim N. Burghartz
- Siegfried R. Mader
- et al.
- 1991
- IEEE T-ED
Paper
Publications
465 results at IEEE T-ED
IIIB-5 High-Transconductance InGaAs/InAlAs SISFET'S
- T.N. Jackson
- P. Solomon
- et al.
- 1991
- IEEE T-ED
PaperMiniature Electron-Optical Columns
- T.H.P. Chang
- D. Kern
- et al.
- 1991
- IEEE T-ED
PaperEffective Acceptor Profiles in Chemically and Plasma Treated WNx/GaAs Shannon Contacts from Capacitance and Current Measurements
- A. Callegari
- 1991
- IEEE T-ED
PaperIVA-5 GaAs Sees THE Light
- M.R. Melloch
- Alan C. Warren
- et al.
- 1991
- IEEE T-ED
PaperSubmicrometer Si and Si-Ge Epitaxial-Bas Double-Poly Self-Aligned Bipolar Transistors
- T.C. Chen
- E. Ganin
- et al.
- 1991
- IEEE T-ED
PaperHigh-Gain Lateral Bipolar Action in a Mosfet Structure
- Sophie Verdonckt-Vandebroek
- S. Simon Wong
- et al.
- 1991
- IEEE T-ED
PaperRecombination Measurement of n-Type Heavily Doped Layer in High/Low Silicon Junctions
- Salvatore Bellone
- Giovanni Busatto
- et al.
- 1991
- IEEE T-ED
PaperIIB-4 Gate-Self-Aligned n-channel and p-channel Germanium MOSFET'S
- C.M. Ransom
- T.N. Jackson
- et al.
- 1991
- IEEE T-ED
PaperGaAs sees the light
- J. Woodall
- Alan C. Warren
- et al.
- 1991
- IEEE T-ED
Paper