M.R. Melloch, J. Woodall, et al.
Materials Science and Engineering B
Summary form only given. Reported are p-i-n photodetectors using GaAs with As precipitates (GaAs) that detect 1.3-μm light with reasonable efficiency. Since high-performance GaAs electronic circuits can be epitaxially grown on GaAs, this work may open the way for an all-GaAs 1.3-μm optical receiver chip. In the GaAs p-i-n devices, the i layer was a 1-μm-thick layer of GaAs. MSM structures with GaAs as the optically active material were also made.
M.R. Melloch, J. Woodall, et al.
Materials Science and Engineering B
S.E. Laux, Alan C. Warren
IEDM 1985
T.J. de Lyon, N.I. Buchan, et al.
Journal of Crystal Growth
X. Yin, H.-M. Chen, et al.
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films