I.M. Vitomirov, A. Raisanen, et al.
Physical Review B
Summary form only given. Reported are p-i-n photodetectors using GaAs with As precipitates (GaAs) that detect 1.3-μm light with reasonable efficiency. Since high-performance GaAs electronic circuits can be epitaxially grown on GaAs, this work may open the way for an all-GaAs 1.3-μm optical receiver chip. In the GaAs p-i-n devices, the i layer was a 1-μm-thick layer of GaAs. MSM structures with GaAs as the optically active material were also made.
I.M. Vitomirov, A. Raisanen, et al.
Physical Review B
A. Bond, P. Parayanthal, et al.
Cambridge Symposium 1983
J. Woodall, R.T. Hodgson, et al.
Applied Physics Letters
H.J. Hovel, R.T. Hodgson, et al.
IEEE T-ED