S. Chang, I.M. Vitomirov, et al.
Physical Review B
Summary form only given. Reported are p-i-n photodetectors using GaAs with As precipitates (GaAs) that detect 1.3-μm light with reasonable efficiency. Since high-performance GaAs electronic circuits can be epitaxially grown on GaAs, this work may open the way for an all-GaAs 1.3-μm optical receiver chip. In the GaAs p-i-n devices, the i layer was a 1-μm-thick layer of GaAs. MSM structures with GaAs as the optically active material were also made.
S. Chang, I.M. Vitomirov, et al.
Physical Review B
R.A. Kiehl, M.A. Olson, et al.
IEDM 1988
J. Freeouf, J. Woodall
Surface Science
H.J. Hovel, J. Woodall
Applied Physics Letters