J. Woodall, P.D. Kirchner, et al.
Corrosion Science
Summary form only given. Reported are p-i-n photodetectors using GaAs with As precipitates (GaAs) that detect 1.3-μm light with reasonable efficiency. Since high-performance GaAs electronic circuits can be epitaxially grown on GaAs, this work may open the way for an all-GaAs 1.3-μm optical receiver chip. In the GaAs p-i-n devices, the i layer was a 1-μm-thick layer of GaAs. MSM structures with GaAs as the optically active material were also made.
J. Woodall, P.D. Kirchner, et al.
Corrosion Science
Chu R. Wie, K. Xie, et al.
Proceedings of SPIE 1989
P.E. Dodd, M.R. Melloch, et al.
Device Research Conference 1993
A. Bond, P. Parayanthal, et al.
Cambridge Symposium 1983