Conference paper
Sub-0.1 μm silicon MOSFETs
D. Kern
ESSDERC 1989
Miniaturized electron-optical systems based on a field emission microsource and a microlens for probe forming have been studied. The performance of systems with dimensions (length and diameter) in the submillimeter to millimeters range can exceed that of a conventional system over a wide range of potentials (100 V to 10 kV) and working distances (up to 10 mm). © 1991 IEEE
D. Kern
ESSDERC 1989
J.F. Smyth, S. Schultz, et al.
Journal of Applied Physics
Norio Watanabe, S. Aoki, et al.
Journal of Electron Spectroscopy and Related Phenomena
D. Kern, J. Paraszczak, et al.
Microcircuit Engineering 1982