IIB-4 Gate-Self-Aligned n-channel and p-channel Germanium MOSFET’S

Paper

01 Jan 1991

IIB-4 Gate-Self-Aligned n-channel and p-channel Germanium MOSFET'S

No abstract available.

Paper

R.F. Boehme, G.S. Cargill III, et al.

Journal of Applied Physics

Paper

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IEEE T-ED

Paper

A.W. Kleinsasser, T.N. Jackson

IEEE Transactions on Magnetics

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Applied Physics Letters