PaperArsenic precipitates and the semi-insulating properties of GaAs buffer layers grown by low-temperature molecular beam epitaxyAlan C. Warren, J. Woodall, et al.Applied Physics Letters
PaperHigh-frequency operation of heavily carbon-doped Ga0.51In 0.49P/GaAs surface-emitting light-emitting diodes grown by metalorganic molecular beam epitaxyT.J. De Lyon, J. Woodall, et al.Applied Physics Letters
PaperFormation of arsenic precipitates in GaAs buffer layers grown by molecular beam epitaxy at low substrate temperaturesM.R. Melloch, N. Otsuka, et al.Applied Physics Letters
Conference paperSurface fermi level engineering - Or there's more to schottky barriers than just the arguments among physicistsJ. Woodall, Alan C. Warren, et al.IEE/LEOS Summer Topical Meetings 1991
