Frequency dependence of ion bombardment of grounded surfaces in rf argon glow discharges in a planar system
- K. Köhler
- D.E. Horne
- et al.
- 1985
- Journal of Applied Physics
Paper
Publications
51 results for J.W. Coburn
Summary Abstract: Plasma potentials of 13.56 MHz rf argon glow discharges in a planar system
- K. Kehler
- J.W. Coburn
- et al.
- 1985
- JVSTA
PaperPlasma-assisted etching: Ion-assisted surface chemistry
- J.W. Coburn
- Harold F. Winters
- 1985
- Applications of Surface Science
PaperPhysical and chemical mechanisms in the ion-enhanced etching of silicon
- JW Coburn
- 1984
- Vacuum
PaperSummary Abstract: Surface processes in plasma-assisted etching environments
- Harold F. Winters
- J.W. Coburn
- et al.
- 1983
- JVSTA
PaperA SIMS study of ion-assisted etching mechanisms; adsorbed fluorine on Si removed by ion bombardment
- E.-A. Knabbe
- J.W. Coburn
- et al.
- 1982
- Surface Science
PaperPlasma-assisted etching
- J.W. Coburn
- 1982
- Plasma Chemistry and Plasma Processing
PaperIon-enhanced gas-surface chemistry: The influence of the mass of the incident ion
- U. Gerlach-Meyer
- J.W. Coburn
- et al.
- 1981
- Surface Science
PaperThe influence of ion sputtering on the elemental analysis of solid surfaces
- J.W. Coburn
- 1979
- Thin Solid Films
PaperAn XPS and Auger investigation of CF+3 ion bombardment of silicon
- T.J. Chuang
- H.F. Winters
- et al.
- 1979
- Applications of Surface Science
Paper