A.B. McLean, R.H. Williams
Journal of Physics C: Solid State Physics
Ion bombardment sputtering is widely used in combination with various analytical approaches to determine the elemental composition of thin solid layers as a function of depth. It is generally recognized that the sputter-etching process can seriously influence the nature of experimentally determined composition depth profiles. The characteristics of the sputter-etching process which must be considered in depth profile work include ion-bombardment-induced alteration of the surface composition, ion-bombardment-induced motion of atoms in the near-surface region and ion-bombardment-induced roughening of the sample surface. A discussion of these processes is presented and much of the recent work in this field is summarized. © 1979.
A.B. McLean, R.H. Williams
Journal of Physics C: Solid State Physics
Min Yang, Jeremy Schaub, et al.
Technical Digest-International Electron Devices Meeting
P.C. Pattnaik, D.M. Newns
Physical Review B
Ming L. Yu
Physical Review B