R.D. Murphy, R.O. Watts
Journal of Low Temperature Physics
Ion bombardment sputtering is widely used in combination with various analytical approaches to determine the elemental composition of thin solid layers as a function of depth. It is generally recognized that the sputter-etching process can seriously influence the nature of experimentally determined composition depth profiles. The characteristics of the sputter-etching process which must be considered in depth profile work include ion-bombardment-induced alteration of the surface composition, ion-bombardment-induced motion of atoms in the near-surface region and ion-bombardment-induced roughening of the sample surface. A discussion of these processes is presented and much of the recent work in this field is summarized. © 1979.
R.D. Murphy, R.O. Watts
Journal of Low Temperature Physics
John G. Long, Peter C. Searson, et al.
JES
H.D. Dulman, R.H. Pantell, et al.
Physical Review B
Fernando Marianno, Wang Zhou, et al.
INFORMS 2021