Robert W. Keyes
Physical Review B
Ion bombardment sputtering is widely used in combination with various analytical approaches to determine the elemental composition of thin solid layers as a function of depth. It is generally recognized that the sputter-etching process can seriously influence the nature of experimentally determined composition depth profiles. The characteristics of the sputter-etching process which must be considered in depth profile work include ion-bombardment-induced alteration of the surface composition, ion-bombardment-induced motion of atoms in the near-surface region and ion-bombardment-induced roughening of the sample surface. A discussion of these processes is presented and much of the recent work in this field is summarized. © 1979.
Robert W. Keyes
Physical Review B
K.A. Chao
Physical Review B
Hiroshi Ito, Reinhold Schwalm
JES
R.J. Gambino, N.R. Stemple, et al.
Journal of Physics and Chemistry of Solids