A Fully Scaled Submicrometer NMOS Technology Using Direct-Write E-Beam Lithography
- Matthew R. Wordeman
- April M. Schweighart
- et al.
- 1985
- IEEE T-ED
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56 results for M. Wordeman
IIIB-2 Channel Length Characterization of LDD MOSFET's-
- Jack Y. C. Sun
- Matthew R. Wordeman
- et al.
- 1985
- IEEE T-ED
MOSFET miniaturization - From one micron to the limits
- Robert H. Dennard
- Matthew R. Wordeman
- 1985
- Physica B+C
An investigation of steady-state velocity overshoot in silicon
- G. Baccarani
- M.R. Wordeman
- 1985
- Solid-State Electronics
Geometry Effects in MOSFET Channel Length Extraction Algorithms
- M.R. Wordeman
- J.Y.-C. Sun
- et al.
- 1985
- IEEE Electron Device Letters
FULLY SEALED HALF-MICROMETER NMOS TECHNOLOGY USING DIRECT-WIRE E-BEAM LITHOGRAPHY.
- M.R. Wordeman
- A.M. Schweighart
- et al.
- 1983
- VLSI Technology 1983
IIIB-1 Degradation of 77-K MOSFET Characteristics Due to Channel Hot Electrons
- Jack Y. C. Sun
- Matthew R. Wordeman
- 1984
- IEEE T-ED
Generalized Scaling Theory and Its Application to a 1/4 micrometer MOSFET Design
- Robert H. Dennard
- Matthew R. Wordeman
- 1984
- IEEE T-ED
Transconductance Degradation in Thin-Oxide MOSFET's
- Giorgio Baccarani
- Matthew R. Wordeman
- 1983
- IEEE T-ED
Alpha-Particle-Induced Soft Error Rate in VLSI Circuits
- George A. Sai-Halasz
- Matthew R. Wordeman
- et al.
- 1982
- IEEE Journal of Solid-State Circuits