Giorgio Baccarani, Matthew R. Wordeman
IEEE T-ED
A review of the status of current 1 μm NMOS and CMOS advanced technologies is followed by a discussion of design and technology approaches to submicron MOSFET's. Fundamental limits to miniaturization are reviewed for both devices and interconnections and for dynamic RAM as well as logic applications. The impact of low-temperature operation on miniaturized structures is also discussed. © 1985.
Giorgio Baccarani, Matthew R. Wordeman
IEEE T-ED
Jack A. Mandelman, Robert H. Dennard, et al.
IBM J. Res. Dev
George A. Sai-Halasz, Matthew R. Wordeman, et al.
IEEE Journal of Solid-State Circuits
Toshiaki Kirihata, Hing Wong, et al.
IEEE Journal of Solid-State Circuits