PaperHigh Transconductance and Velocity Overshoot in NMOS Devices at the 0.1-μm Gate-Length LevelGeorge A. Sai-Halasz, Matthew R. Wordeman, et al.IEEE Electron Device Letters
PaperGeneralized Scaling Theory and Its Application to a 1/4 micrometer MOSFET DesignRobert H. Dennard, Matthew R. WordemanIEEE T-ED
PaperA Fully Scaled Submicrometer NMOS Technology Using Direct-Write E-Beam LithographyMatthew R. Wordeman, April M. Schweighart, et al.IEEE T-ED
PaperDesign and Experimental Technology for 0.1-μm Gate-Length Low-Temperature Operation FET'sGeorge A. Sai-Halasz, Matthew R. Wordeman, et al.IEEE Electron Device Letters
