Memories of tomorrow
- William Reohr
- Heinz Hönigschmid
- et al.
- 2002
- IEEE Circuits and Devices Magazine
Review
Publications
12 results for Roy E. Scheuerlein
A 10ns read and write non-volatile memory array using a magnetic tunnel junction and FET switch in each cell
- R. Scheuerlein
- W.J. Gallagher
- et al.
- 2000
- ISSCC 2000
Conference paperExchange-biased magnetic tunnel junctions and application to nonvolatile magnetic random access memory (invited)
- S.S.P. Parkin
- K.P. Roche
- et al.
- 1999
- Journal of Applied Physics
PaperMagneto-resistive IC memory limitations and architecture implications
- R. Scheuerlein
- 1998
- INVMTC 1998
Conference paperMagnetization Reversal in Micron-Sized Magnetic Thin Films
- R.H. Koch
- J.G. Deak
- et al.
- 1998
- Physical Review Letters
PaperA Pulsed Sensing Scheme with a Limited BitLine Swing
- R. Scheuerlein
- Y. Katayama
- et al.
- 1992
- IEEE Journal of Solid-State Circuits
PaperA Large VDSData Retention Test Pattern for DRAM’s
- R.L. Franch
- S. Dhong
- et al.
- 1992
- IEEE Journal of Solid-State Circuits
PaperA 14-ns 4-Mb CMOS DRAM with 300-mW Active Power
- Toshiaki Kirihata
- Sang H. Dhong
- et al.
- 1992
- IEEE Journal of Solid-State Circuits
PaperExperimental 27 ns 1 Mb CMOS high-speed DRAM
- S. Dhong
- W.H. Henkels
- et al.
- 1989
- VLSI Circuits 1989
Conference paperA 22-ns 1-Mbit CMOS High-Speed DRAM with Address Multiplexing
- Nicky C.C. Lu
- Gary B. Bronner
- et al.
- 1989
- IEEE Journal of Solid-State Circuits
Paper