J.H. Kaufman, Owen R. Melroy, et al.
Synthetic Metals
Paper
Reliability of MOS devices with tungsten gates
Abstract
We have investigated the behaviour under accelerated reliability tests of MOS capacitors stressed at high voltage in accumulation with ultra-thin SiO 2 dielectrics and with tungsten gates. Standard p+ poly-Si gates are used as reference. In this report, we show and discuss data concerning the oxide wearout and the breakdown transient. © 2004 Elsevier B.V. All rights reserved.
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