A new methodology for characterizing the progressive BD of HfO 2/SiO2 metal gate stacks
- R. Pagano
- S. Lombardo
- et al.
- 2008
- SBMicro 2008
Conference paper
Publications
7 results for F. Palumbo
A novel approach to characterization of progressive breakdown in high-k/metal gate stacks
- R. Pagano
- S. Lombardo
- et al.
- 2008
- Microelectronics Reliability
PaperDielectric breakdown mechanisms in gate oxides
- Salvatore Lombardo
- James H. Stathis
- et al.
- 2005
- Journal of Applied Physics
ReviewBreakdown transients in ultra-thin gate oxynitrides
- S. Lombarde
- F. Palumbo
- et al.
- 2004
- ICICDT 2004
Conference paperDegradation of ultra-thin oxides with Tungsten gates under high voltage: Wear-out and breakdown transient
- F. Palumbo
- S. Lombardo
- et al.
- 2004
- IRPS 2004
Conference paperDegradation of ultra-thin oxides with tungsten gates under high voltage: Wear-out and breakdown transient
- F. Palumbo
- S. Lombardo
- et al.
- 2004
- IRPS 2004
Conference paperReliability of MOS devices with tungsten gates
- F. Palumbo
- S. Lombardo
- et al.
- 2004
- Microelectronic Engineering
Paper