Electron energy dissipation model of gate dielectric progressive breakdown in n- and p-channel field effect transistors
- S. Lombardo
- Ernest Y. Wu
- et al.
- 2017
- Journal of Applied Physics
Paper
Publications
20 results for S. Lombardo
Comprehensive model for progressive breakdown in nFETs and pFETs
- S. Lombardo
- Ernest Y. Wu
- et al.
- 2016
- IEDM 2016
Conference paperThe dielectric breakdown in gate oxides under high field stress
- S. Lombardo
- J.H. Stathis
- et al.
- 2009
- ECS Meeting 2009
Conference paperA new methodology for characterizing the progressive BD of HfO 2/SiO2 metal gate stacks
- R. Pagano
- S. Lombardo
- et al.
- 2008
- SBMicro 2008
Conference paperA novel approach to characterization of progressive breakdown in high-k/metal gate stacks
- R. Pagano
- S. Lombardo
- et al.
- 2008
- Microelectronics Reliability
PaperDielectric breakdown mechanisms in gate oxides
- Salvatore Lombardo
- James H. Stathis
- et al.
- 2005
- Journal of Applied Physics
ReviewDegradation of ultra-thin oxides with Tungsten gates under high voltage: Wear-out and breakdown transient
- F. Palumbo
- S. Lombardo
- et al.
- 2004
- IRPS 2004
Conference paperDegradation of ultra-thin oxides with tungsten gates under high voltage: Wear-out and breakdown transient
- F. Palumbo
- S. Lombardo
- et al.
- 2004
- IRPS 2004
Conference paperReliability of MOS devices with tungsten gates
- F. Palumbo
- S. Lombardo
- et al.
- 2004
- Microelectronic Engineering
PaperReliability of ultra-thin oxides in CMOS circuits
- J.H. Stathis
- B.P. Linder
- et al.
- 2003
- Microelectronics Reliability
Conference paper