Min Yang, Jeremy Schaub, et al.
Technical Digest-International Electron Devices Meeting
Patterning of 100 nm critical dimension features using X-ray proximity lithography is discussed. Lithographic performance is shown using photoresists APEX-E, UV-4 and an experimental formulation of ESCAP photoresist. Conditions to pattern isolated and nested lines at maximum permissible gap is discussed. ©1997TAPJ.
Min Yang, Jeremy Schaub, et al.
Technical Digest-International Electron Devices Meeting
J.K. Gimzewski, T.A. Jung, et al.
Surface Science
Thomas H. Baum, Carl E. Larson, et al.
Journal of Organometallic Chemistry
G. Will, N. Masciocchi, et al.
Zeitschrift fur Kristallographie - New Crystal Structures