Paper
The DX centre
T.N. Morgan
Semiconductor Science and Technology
In chemically amplified resists, relief image formation strongly depends on the chemistry occurring during the post-exposure bake step. By combining experimental measurements and kinetics simulations, we propose a reaction mechanism describing both acid-catalyzed and uncatalyzed thermolysis routes leading to changes in polymer solubility. The temperature-dependent kinetic parameters derived here provide guidance in CA resist process and materials design. © 1995 Elsevier Science B.V. All rights reserved.
T.N. Morgan
Semiconductor Science and Technology
A. Krol, C.J. Sher, et al.
Surface Science
A. Nagarajan, S. Mukherjee, et al.
Journal of Applied Mechanics, Transactions ASME
M.A. Lutz, R.M. Feenstra, et al.
Surface Science