I. Morgenstern, K.A. Müller, et al.
Physica B: Physics of Condensed Matter
Paper
Formation of Si:CP layer through in-situ doping and implantation process for n-type metal-oxide-semiconductor devices
Abstract
In this study, the effect of Cluster Carbon implantation and thermal annealing for recrystallization on the properties of phosphorus doped Si (Si
Related
T. Schneider, E. Stoll
Physical Review B
O.F. Schirmer, W. Berlinger, et al.
Solid State Communications
David B. Mitzi
Journal of Materials Chemistry