S. Cohen, T.O. Sedgwick, et al.
MRS Proceedings 1983
Paper
Formation of Si:CP layer through in-situ doping and implantation process for n-type metal-oxide-semiconductor devices
Abstract
In this study, the effect of Cluster Carbon implantation and thermal annealing for recrystallization on the properties of phosphorus doped Si (Si
Related
Frank R. Libsch, Takatoshi Tsujimura
Active Matrix Liquid Crystal Displays Technology and Applications 1997
Mitsuru Ueda, Hideharu Mori, et al.
Journal of Polymer Science Part A: Polymer Chemistry
K.N. Tu
Materials Science and Engineering: A