Publications

32 results for Shogo Mochizuki

Evaluation of (110) versus (001) Channel Orientation for Improved nFET/pFET Device Performance Trade-Off in Gate-All-Around Nanosheet Technology
- - Shogo Mochizuki
  - Nicolas Loubet
  - et al.
- 2023
- IEDM 2023
Contact Cavity Shaping and Selective SiGe:B Low-Temperature Epitaxy Process Solution for sub 10^-9 Ω.cm² Contact Resistivity in Nonplanar FETs
- - N. Breil
  - B.-C. Lee
  - et al.
- 2023
- VLSI Technology 2023
Improving FinFET Junctions and Contacts via Laser Annealing
- - Oleg Gluschenkov
  - Yasir Sulehria
  - et al.
- 2023
- IWJT 2023
Precession Electron Diffraction (PED) Strain Characterization in Stacked Nanosheet FET Structure
- - Juntao Li
  - Shogo Mochizuki
  - et al.
- 2022
- ISTFA 2022
Vertical-Transport Nanosheet Technology for CMOS Scaling beyond Lateral-Transport Devices
- - H. Jagannathan
  - B. Anderson
  - et al.
- 2021
- IEDM 2021
Stacked Gate-All-Around Nanosheet pFET with Highly Compressive Strained Si1-xGex Channel
- - Shogo Mochizuki
  - M. Bhuiyan
  - et al.
- 2020
- IEDM 2020
Parasitic Resistance Reduction for Aggressively Scaled Stacked Nanosheet Transistors
- - Su-Chen Fan
  - Ruilong Xie
  - et al.
- 2020
- IITC 2020
Structural and Electrical Demonstration of SiGe Cladded Channel for PMOS Stacked Nanosheet Gate-All-Around Devices
- - Shogo Mochizuki
  - B. Colombeau
  - et al.
- 2020
- VLSI Technology 2020
NBTI Impact of Surface Orientation in Stacked Gate-All-Around Nanosheet Transistor
- - Huimei Zhou
  - Miaomiao Wang
  - et al.
- 2020
- IRPS 2020
SiGe Channel CMOS: Understanding Dielectric Breakdown and Bias Temperature Instability Tradeoffs
- - Richard G. Southwick
  - Miaomiao Wang
  - et al.
- 2019
- VLSI Technology 2019