Fowler-Nordheim tunneling of carriers in MOS transistors: Two-dimensional simulation of gate current employing FIELDAY
- S.N. Mohammad
- G. Fiorenza
- et al.
- 1995
- Solid State Electronics
Paper
Publications
42 results at Solid State Electronics
Observation by spin-resolved resonant magnetotunneling of oscillatory Landé factor in two-dimensional electron systems
- E. Mendez
- J.J. Nocera
- et al.
- 1994
- Solid State Electronics
PaperCross-sectional STM on superlattices and the effect of doping
- H. Salemink
- M. Johnson
- et al.
- 1994
- Solid State Electronics
PaperGeneralized energy transport models for semiconductor device simulation
- M.C. Vecchi
- L. Reyna
- 1994
- Solid State Electronics
PaperAn analytical model of current-voltage characteristics and d.c. small-signal parameters for Si/Si1-xGex FETs
- Kuo-Wei Liu
- A.F.M. Anwar
- et al.
- 1994
- Solid State Electronics
PaperTrench-proximity effects on collector current in self-aligned NPN and PNP bipolar transistors
- P.F. Lu
- J. Warnock
- 1994
- Solid State Electronics
PaperEnhancement of free-to-bound transitions due to resonant electron capture in Be-doped AlGaAs/GaAs quantum wells
- K. Muraki
- Y. Takahashi
- et al.
- 1994
- Solid State Electronics
PaperFeasibility of room-temperature operation of tunable coupled-quantum-well lasers
- M. Ogawa
- E. Mendez
- 1994
- Solid State Electronics
PaperReduced hot-carrier reliability degradation of x-ray irradiated MOSFETs in a 0.25 μm CMOS technology with ultra-thin gate oxide
- A. Acovic
- C.C.-H. Hsu
- et al.
- 1993
- Solid State Electronics
PaperTwo-dimensional MOSFET simulation by means of a multidimensional spherical harmonics expansion of the Boltzmann transport equation
- Antonio Gnudi
- D. Ventura
- et al.
- 1993
- Solid State Electronics
Paper