H.D. Dulman, R.H. Pantell, et al.
Physical Review B
Paper
Reduced hot-carrier reliability degradation of x-ray irradiated MOSFETs in a 0.25 μm CMOS technology with ultra-thin gate oxide
Abstract
No abstract available.
Related
J. Paraszczak, J.M. Shaw, et al.
Micro and Nano Engineering
C.M. Brown, L. Cristofolini, et al.
Chemistry of Materials
K.N. Tu
Materials Science and Engineering: A