Reduced hot-carrier reliability degradation of x-ray irradiated MOSFETs in a 0.25 μm CMOS technology with ultra-thin gate oxide

Fernando Marianno, Wang Zhou, et al.

INFORMS 2021

C.M. Brown, L. Cristofolini, et al.

Chemistry of Materials

L.K. Wang, A. Acovic, et al.

MRS Spring Meeting 1993

M. Hargrove, S.W. Crowder, et al.

IEDM 1998