Density scaling with gate-all-around silicon nanowire MOSFETs for the 10 nm node and beyond
- Sarunya Bangsaruntip
- K. Balakrishnan
- et al.
- 2013
- IEDM 2013
Conference paper
Publications
14 results at IEDM 2013
A time-dependent clustering model for non-uniform dielectric breakdown
- Ernest Y. Wu
- B. Li
- et al.
- 2013
- IEDM 2013
Conference paper200 mm wafer-scale integration of sub-20 nm sacrificial nanofluidic channels for manipulating and imaging single DNA molecules
- C. Wang
- S.W. Nam
- et al.
- 2013
- IEDM 2013
Conference paperComprehensive study of effective current variability and MOSFET parameter correlations in 14nm multi-fin SOI FINFETs
- Abhijeet Paul
- Andres Bryant
- et al.
- 2013
- IEDM 2013
Conference paperHigh performance UTBB FDSOI devices featuring 20nm gate length for 14nm node and beyond
- Q. Liu
- M. Vinet
- et al.
- 2013
- IEDM 2013
Conference paperA phase change memory cell with metallic surfactant layer as a resistance drift stabilizer
- Sangbum Kim
- N. Sosa
- et al.
- 2013
- IEDM 2013
Conference paperCarbon nanotube complementary logic based on Erbium contacts and self-assembled high purity solution tubes
- Shu-Jen Han
- Satoshi Oida
- et al.
- 2013
- IEDM 2013
Conference paper2nd Generation dual-channel optimization with cSiGe for 22nm HP technology and beyond
- C. Ortolland
- Daniel Jaeger
- et al.
- 2013
- IEDM 2013
Conference paperAtomic-level engineering of phase change material for novel fast-switching and high-endurance PCM for storage class memory application
- H.Y. Cheng
- Matthew Brightsky
- et al.
- 2013
- IEDM 2013
Conference paperSelf-aligned III-V MOSFETs: Towards a CMOS compatible and manufacturable technology solution
- Y. Sun
- A. Majumdar
- et al.
- 2013
- IEDM 2013
Conference paper