Publications

15 results at IEDM 2014

High performance 14nm SOI FinFET CMOS technology with 0.0174μm² embedded DRAM and 15 levels of Cu metallization
- - C.-H.C-H. Lin
  - Brian Greene
  - et al.
- 2014
- IEDM 2014
Multiple breakdown phenomena and modeling for non-uniform dielectric systems
- - Ernest Y. Wu
  - Baozhen Li
  - et al.
- 2014
- IEDM 2014
Experimental demonstration and tolerancing of a large-scale neural network (165,000 synapses), using phase-change memory as the synaptic weight element
- - Geoffrey W. Burr
  - Robert M. Shelby
  - et al.
- 2014
- IEDM 2014
0.026μm² high performance Embedded DRAM in 22nm technology for server and SOC applications
- - C. Pei
  - G. Wang
  - et al.
- 2014
- IEDM 2014
Capacity optimization of emerging memory systems: A shannon-inspired approach to device characterization
- - Jesse H. Engel
  - Sukru Burc Eryilmaz
  - et al.
- 2014
- IEDM 2014
Ultra-high-Q air-core slab inductors for on-chip power conversion
- - Naigang Wang
  - David Goren
  - et al.
- 2014
- IEDM 2014
Experiment and model for deviation from Pelgrom scaling relation in device width
- - Ning Lu
  - J. Brown
  - et al.
- 2014
- IEDM 2014
Circuit-level benchmarking of access devices for resistive nonvolatile memory arrays
- - Pritish Narayanan
  - Geoffrey W. Burr
  - et al.
- 2014
- IEDM 2014
High-performance CMOS-compatible self-aligned In_0.53Ga_0.47As MOSFETs with GMSAT over 2200 μs/μm at V_DD = 0.5 v
- - Yanning Sun
  - Amlan Majumdar
  - et al.
- 2014
- IEDM 2014
Thin-film heterojunction field-effect transistors for ultimate voltage scaling and low-temperature large-area fabrication of active-matrix backplanes
- - Bahman Hekmatshoar
  - Ali Afzali-Ardakani
- 2014
- IEDM 2014