Sungjae Lee, J. Johnson, et al.
VLSI Technology 2012
Through modeling, simulations, and experimental data, we show that FETs exhibit several width dependent characteristics purely due to un-correlated random variations among sub-threshold currents in different width segments. They include unit-width median sub-threshold current and constant-current threshold voltage. The width scaling relation for threshold voltage mismatch is different from Pelgrom scaling relation for sufficiently large variation when compared to the thermal voltage.
Sungjae Lee, J. Johnson, et al.
VLSI Technology 2012
M. Hargrove, S. Voldman, et al.
IRPS 1998
Ning Lu
ISQED 2008
C. Pei, G. Wang, et al.
IEDM 2014