High Transconductance and Velocity Overshoot in NMOS Devices at the 0.1-μm Gate-Length Level
- George A. Sai-Halasz
- Matthew R. Wordeman
- et al.
- 1988
- IEEE Electron Device Letters
Publications
307 results at IEEE Electron Device Letters
Inverter Performance Of Deep-Submicrometer Mosfet'S
- George A. Sai-Halasz
- Matthew R. Wordeman
- et al.
- 1988
- IEEE Electron Device Letters
Thin-Film Transistors Incorporating a Thin, High-Quality PECVD SiO2 Gate Dielectric
- D.A. Buchanan
- J. Batey
- et al.
- 1988
- IEEE Electron Device Letters
105-GHz Bandwidth Metal-Semiconductor-Metal Photodiode
- Jean-Marc Halbout
- Peter Vettiger
- et al.
- 1988
- IEEE Electron Device Letters
5.2-GHz Bandwidth Monolithic GaAs Optoelectronic Receiver
- Christoph S. Harder
- Bart Van Zeghbroeck
- et al.
- 1988
- IEEE Electron Device Letters
Selective Epitaxy Base Transistor (SEBT)
- J.N. Burghartz
- B.J. Ginsberg
- et al.
- 1988
- IEEE Electron Device Letters
Design Considerations of High-Performance Narrow-Emitter Bipolar Transistors
- Denny D. Tang
- Tze-Chiang Chen
- et al.
- 1987
- IEEE Electron Device Letters
Lateral Encroachment of Extrinsic-Base Dopant in Submicrometer Bipolar Transistors
- Pong-Fei Lu
- G.P. Li
- et al.
- 1987
- IEEE Electron Device Letters
Symmetric-Gain, Zero-Offset, Self-Aligned, and Refractory-Contact Double HBT's
- Sandip Tiwari
- Steven L. Wright
- 1987
- IEEE Electron Device Letters
Electrical Characteristics of Very Thin SiO2 Deposited at Low Substrate Temperatures
- J. Batey
- E. Tierney
- et al.
- 1987
- IEEE Electron Device Letters