Self-Aligned n-Channel Germanium MOSFETs With a Thin Ge Oxynitride Gate Dielectric and Tungsten Gate
- Hulling Shang
- Kam-Leung Lee
- et al.
- 2004
- IEEE Electron Device Letters
Publications
Date
Featured collections
Popular topics
306 results at IEEE Electron Device Letters
Evaluation of NBTI in HfO2 Gate-Dielectric Stacks With Tungsten Gates
- Sufi Zafar
- Byoung H. Lee
- et al.
- 2004
- IEEE Electron Device Letters
High-Frequency Response in Carbon Nanotube Field-Effect Transistors
- David J. Frank
- Joerg Appenzeller
- 2004
- IEEE Electron Device Letters
Hall Mobility in Hafnium Oxide Based MOSFETs: Charge Effects
- L.Å. Ragnarsson
- N.A. Bojarczuk
- et al.
- 2003
- IEEE Electron Device Letters
An Analytical Model to Project MOS Transistor Lifetime Improvement by Deuterium Passivation of Interface Traps
- Kangguo Cheng
- Joseph W. Lyding
- 2003
- IEEE Electron Device Letters
The Importance of Distributed Grounding in Combination with Porous Si Trenches for the Reduction of RF Crosstalk Through p- Si Substrate
- Han-Su Kim
- Kyuchul Chong
- et al.
- 2003
- IEEE Electron Device Letters
On the thermal stability of atomic layer deposited TiN as gate electrode in MOS devices
- J. Westlinder
- T. Schram
- et al.
- 2003
- IEEE Electron Device Letters
3.9 ps SiGe HBT ECL ring oscillator and transistor design for minimum gate delay
- Basanth Jagannathan
- Mounir Meghelli
- et al.
- 2003
- IEEE Electron Device Letters
Performance dependence of CMOS on silicon substrate orientation for ultrathin oxynitride and HfO2 gate dielectrics
- Min Yang
- Evgeni P. Gusev
- et al.
- 2003
- IEEE Electron Device Letters
Electrical characterization of germanium p-channel MOSFETs
- H. Shang
- H. Okorn-Schimdt
- et al.
- 2003
- IEEE Electron Device Letters