Nonquasi-Static Effects in Saturated Bipolar Circuits
- B.S. Wu
- C.T. Chuang
- et al.
- 1994
- IEEE Transactions on Electron Devices
Paper
Publications
139 results at IEEE Transactions on Electron Devices
A Room Temperature 0.1 µm CMOS on SOI
- Ghavam G. Shahidi
- Carl A. Anderson
- et al.
- 1994
- IEEE Transactions on Electron Devices
PaperA Comparison of Numerical Solutions of the Boltzmann Transport Equation for High-Energy Electron Transport Silicon
- Thomas Vogelsang
- Masaaki Tomizawa
- et al.
- 1994
- IEEE Transactions on Electron Devices
PaperSi/Si1-xGexValence Band Discontinuity Measurements Using a Semiconductor-Insulator-Semiconductor (SIS) Heterostructure
- Brian R. Bennett
- Emmanuel F. Crabbé
- et al.
- 1994
- IEEE Transactions on Electron Devices
PaperA Low-Capacitance Bipolar/BiCMOS Isolation Technology, Part I—Concept, Fabrication Process, and Characterization
- Joachim N. Burghartz
- Robert C. McIntosh
- et al.
- 1994
- IEEE Transactions on Electron Devices
PaperSiGe-Channel Heterojunction p-MOSFET’s
- Sophie Verdonckt-Vandebroek
- Bernard S. Meyerson
- et al.
- 1994
- IEEE Transactions on Electron Devices
PaperA Low-Capacitance Bipolar/BiCMOS Isolation Technology, Part II—Circuit Performance and Device Self-Heating
- Joachim N. Burghartz
- Arturo O. Cifuentes
- et al.
- 1994
- IEEE Transactions on Electron Devices
PaperIVB-6 a-Si Thin Film Transistors Using Dilute-Gas Plasma-Enhanced Chemical Vapor Deposition
- S.L. Wright
- M.B. Rothwell
- et al.
- 1993
- IEEE Transactions on Electron Devices
PaperIIA-9 Undoped SiGe Heterostructure Field Effect Transistors
- T.N. Jackson
- S. Nelson
- et al.
- 1993
- IEEE Transactions on Electron Devices
PaperIIA-3 113-GHz fT Graded-Base SiGe HBT's
- E.F. Crabbé
- B.S. Meyerson
- et al.
- 1993
- IEEE Transactions on Electron Devices
Paper