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- Robert C. McIntosh
- et al.
- 1994
- IEEE Transactions on Electron Devices
Paper
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- IEEE Transactions on Electron Devices
PaperA Comparison of Numerical Solutions of the Boltzmann Transport Equation for High-Energy Electron Transport Silicon
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- IEEE Transactions on Electron Devices
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- IEEE Transactions on Electron Devices
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- et al.
- 1994
- IEEE Transactions on Electron Devices
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- IEEE Transactions on Electron Devices
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- IEEE Transactions on Electron Devices
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- 1993
- IEEE Transactions on Electron Devices
PaperInvestigation of the Impact Ionization in the Hydrodynamic Model
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- IEEE Transactions on Electron Devices
PaperOn the Profile Design and Optimization of Epitaxial Si and SiGe-Base Bipolar Technology for 77 K Applications—Part I: Transistor DC Design Considerations
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- et al.
- 1993
- IEEE Transactions on Electron Devices
Paper