IEEE Transactions on Electron Devices

Paper

01 Jan 1993

IVA-5 Base Recombination in High Performance InGaAs/InP HBT's

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Abstract

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Paper

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Base recombination in high performance InGaAs/InP HBTs

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InP/InGaAs double heterojunction bipolar transistors incorporating carbon-doped bases and superlattice graded base-collector junctions

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