IEEE Transactions on Electron Devices

Paper

01 Jan 1993

VIA-7 In As Bipolar Transistors: A Path to High-Performance Cryogenic Electronics

View publication

Abstract

No abstract available.

Related

Paper

Comment on arsenic precipitate coarsening in GaAs epilayers

Paper

Thermal velocity limits to diffusive electron transport in thin-base np⁺n GaAs bipolar transistors

Paper

Comparative study of minority electron properties in p⁺-GaAs doped with beryllium and carbon

Paper

Thermal velocity limits to diffusive electron transport in thin-base np⁺n GaAs bipolar transistors

View all publications