DEFECTS IN SILICON FILMS GROWN BY EPITAXIAL LATERAL OVERGROWTH.
- B.J. Ginsberg
- M. Arienzo
- et al.
- 1983
- ECS Meeting 1983
Conference paper
Publications
28 results for S. Mader
Ion-implanted polysilicon diffusion sources
- Alwin E. Michel
- R.H. Kastl
- et al.
- 1983
- Nuclear Instruments and Methods In Physics Research
PaperPulsed ion beam irradiation of silicon
- W.K. Chu
- S. Mader
- et al.
- 1982
- Nuclear Instruments and Methods
PaperDeclustering and melting threshold study in laser irradiated Si(As)
- E. Rimini
- W.K. Chu
- et al.
- 1981
- Journal of Applied Physics
PaperUse of misfit strain to remove dislocations from epitaxial thin films
- J.W. Matthews
- A.E. Blakeslee
- et al.
- 1976
- Thin Solid Films
PaperCharacterization of dislocations in gadolinium gallium garnet single crystals by transmission X-ray topography
- Krishan Lal
- S. Mader
- 1976
- Journal of Crystal Growth
PaperA mechanism for dislocation multiplication at precipitates or inclusions in crystals
- J.W. Matthews
- S. Mader
- 1972
- Scripta Metallurgica
PaperElektronenmikroskopische Beobachtungen von Versetzungen in Germanium
- H. Alexander
- S. Mader
- 1962
- Acta Metallurgica
Paper