DEFECTS IN SILICON FILMS GROWN BY EPITAXIAL LATERAL OVERGROWTH.

The lateral growth of silicon over the edge of varying width SiO//2 lines patterned along the left bracket 110 right bracket directions of (001) oriented wafers has been investigated. The silicon films were deposited in a series of grow-etch steps using SiCl//4, H//2 and HCl in an atmospheric reactor at 1050 degree C. Transmission electron microscopy has been used to characterize the defect structure of the grown silicon films. The influence of a higher temperature (1150 degree C) pre-bake on both nucleation and film quality is discussed.