PaperA mechanism for dislocation multiplication at precipitates or inclusions in crystalsJ.W. Matthews, S. MaderScripta Metallurgica
PaperThe interpretation of dislocation contrast in x-ray topographs of GaAs 1-x PxS. Mader, A.E. Blakeslee, et al.Journal of Applied Physics
Conference paperSelective epitaxy base for bipolar transistorsJ.N. Burghartz, B.J. Ginsberg, et al.ESSDERC 1988