J.W. Matthews
Scripta Metallurgica
Paper
A mechanism for dislocation multiplication at precipitates or inclusions in crystals
Abstract
No abstract available.
Related
J.N. Burghartz, J.H. Comfort, et al.
IEDM 1990
Conference paper
Selective epitaxy base for bipolar transistors
J.N. Burghartz, B.J. Ginsberg, et al.
ESSDERC 1988
J.W. Matthews
physica status solidi (a)