Preparation and Characterization of Ruthenium Dioxide Crystals
- M.W. Shafer
- R.A. Figat
- et al.
- 2019
- JES
Paper
Publications
22 results for Joseph Angilello
A Viscous Flow Model to Explain the Appearance of High Density Thermal Si02 at Low Oxidation Temperatures
- E. Tierney
- J. Angilello
- 2019
- JES
PaperEtch pits and dislocations in {100} GaAs wafers
- J. Angilello
- R.M. Potemski
- et al.
- 2008
- Journal of Applied Physics
PaperContact reaction between Si and Pd-W alloy films
- J.O. Olowolafe
- K.N. Tu
- et al.
- 2008
- Journal of Applied Physics
PaperElectromechanical feedback control for lang topography
- Joseph Angilello
- Clinton Wood
- 2003
- Review of Scientific Instruments
PaperThe interpretation of dislocation contrast in x-ray topographs of GaAs 1-x Px
- S. Mader
- A.E. Blakeslee
- et al.
- 2003
- Journal of Applied Physics
PaperThermal stability of Si1-xCx/Si strained layer superlattices
- M.S. Goorsky
- Subramanian S. Iyer
- et al.
- 1992
- Applied Physics Letters
PaperPreparation And Some Properties Of Sputtered Co/U-As Multilayers
- T.S. Plaskett
- P. Fumagalli
- et al.
- 1992
- IEEE Transactions on Magnetics
PaperEpitaxy of (100) Cu on (100) Si by evaporation near room temperatures: In-plane epitaxial relation and channeling analysis
- Chin-An Chang
- Joyce C. Liu
- et al.
- 1990
- Applied Physics Letters
PaperCrystallization kinetics of amorphous NiSix films
- R.D. Thompson
- J. Angilello
- et al.
- 1990
- Thin Solid Films
Paper