Etch pits and dislocations in {100} GaAs wafers

J. Angilello; R.M. Potemski; G.R. Woolhouse

doi:10.1063/1.321833

Journal of Applied Physics

Paper

02 Sep 2008

Etch pits and dislocations in {100} GaAs wafers

View publication

Abstract

The reliability of molten KOH for revealing dislocations intersecting {100} faces of GaAs has been tested using transmission x-ray topography. It is found to be a "faithful" etch.

Paper

Reduction of background doping in metalorganic vapor phase epitaxy of GaAs using triethylgallium at low reactor pressures

T.F. Kuech, R.M. Potemski

Applied Physics Letters

Paper

I.3 The Effect of Doping on the Degradation of GaAs-Al_xGa_1−xAs Injection Lasers

P.G. McMullin, J.M. Blum, et al.

IEEE JQE

Paper

Some properties of chemically vapor deposited films of Al_xO_yN_z on silicon

E.A. Irene, V.J. Silvestri, et al.

Journal of Electronic Materials

Paper

2.22 The deposition by evaporation of CuAl alloy films

F.M. d'Heurle, C. Alliota, et al.

Vacuum

View all publications

Abstract

Related

Reduction of background doping in metalorganic vapor phase epitaxy of GaAs using triethylgallium at low reactor pressures

I.3 The Effect of Doping on the Degradation of GaAs-AlxGa1−xAs Injection Lasers

Some properties of chemically vapor deposited films of AlxOyNz on silicon

2.22 The deposition by evaporation of CuAl alloy films

I.3 The Effect of Doping on the Degradation of GaAs-Al_xGa_1−xAs Injection Lasers

Some properties of chemically vapor deposited films of Al_xO_yN_z on silicon