High carbon doping efficiency of bromomethanes in gas source molecular beam epitaxial growth of GaAs
- T.J. De Lyon
- N.I. Buchan
- et al.
- 1991
- Applied Physics Letters
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177 results for J. Woodall
High-frequency operation of heavily carbon-doped Ga0.51In 0.49P/GaAs surface-emitting light-emitting diodes grown by metalorganic molecular beam epitaxy
- T.J. De Lyon
- J. Woodall
- et al.
- 1991
- Applied Physics Letters
Subpicosecond, freely propagating electromagnetic pulse generation and detection using GaAs:As epilayers
- Alan C. Warren
- N. Katzenellenbogen
- et al.
- 1991
- Applied Physics Letters
Valence-band-edge shift due to doping in p+ GaAs
- J.A. Silberman
- T.J. De Lyon
- et al.
- 1991
- Applied Physics Letters
Temperature dependence of the photoreflectance of a strained layer (001) In0.21Ga0.79As/GaAs single quantum well
- Y.S. Huang
- H. Qiang
- et al.
- 1991
- Journal of Applied Physics
Low-resistivity p-type ZnSe through surface Fermi level engineering
- J. Woodall
- R.T. Hodgson
- et al.
- 1991
- Applied Physics Letters
Fermi level pinning at epitaxial Si on GaAs(100) interfaces
- J.A. Silberman
- T.J. De Lyon
- et al.
- 1991
- Applied Physics Letters
Highly carbon-doped p-type Ga0.5In0.5As and Ga 0.5In0.5P by carbon tetrachloride in gas-source molecular beam epitaxy
- T.P. Chin
- P.D. Kirchner
- et al.
- 1991
- Applied Physics Letters
Temperature dependence of the direct band gap of InxGa1-xAs (x=0.06 and 0.15)
- Z. Hang
- D. Yan
- et al.
- 1991
- Physical Review B
Correlation of deep-level and chemically-active-site densities at vicinal GaAs(100)-Al interfaces
- S. Chang
- I.M. Vitomirov
- et al.
- 1991
- Physical Review B