A.B. McLean, R.H. Williams
Journal of Physics C: Solid State Physics
Paper
GaAs buffer layers grown at low substrate temperatures using As2 and the formation of arsenic precipitates
Abstract
We have grown GaAs layers by molecular beam epitaxy at low substrate temperatures (250°C) using the dimer arsenic source As2. Following a one hour anneal at 600°C, the GaAs layers were examined with transmission electron microscopy. The GaAs layers contained arsenic precipitates of average diameter 100 Å and density of 1017 cm-3. © 1991.
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