CVD-Co/Cu(Mn) integration and reliability for 10 nm node
- Takeshi Nogami
- M. He
- et al.
- 2013
- IITC 2013
Conference paper
Publications
14 results for Tibor Bolom
Electrical properties and reliability of ALD TaN barrier for sub-90nmPitch Cu interconnects
- Tibor Bolom
- J. Lee
- et al.
- 2013
- ADMETA 2013
Conference paperElectromigration comparison of selective CVD cobalt capping with PVD Ta(N) and CVD cobalt liners on 22nm-groundrule dual-damascene Cu interconnects
- A. Simon
- Tibor Bolom
- et al.
- 2013
- IRPS 2013
Conference paperX-ray characterization of PEALD versus PVD tantalum nitride barrier deposition and the impact on via contact resistance
- Xunyuan Zhang
- Oscar Van der Straten
- et al.
- 2013
- ECS Transactions
Conference paperElectromigration extendibility of Cu(Mn) alloy-seed interconnects, and understanding the fundamentals
- Takeshi Nogami
- C. Penny
- et al.
- 2012
- IEDM 2012
Conference paperCompetitive and cost effective copper/low-k interconnect (BEOL) for 28 nm CMOS technologies
- R. Augur
- C. Child
- et al.
- 2012
- Microelectronic Engineering
PaperMn-dopant segregation as an indicator of barrier integrity in 32nm groundrule Cu/ultra-low K interconnects
- Andrew H. Simon
- Frieder H. Baumann
- et al.
- 2011
- ADMETA 2011
Conference paperHigh reliability 32 nm Cu/ULK BEOL based on PVD CuMn seed, and its extendibility
- Takeshi Nogami
- Tibor Bolom
- et al.
- 2010
- IEDM 2010
Conference paperCompetitive and cost effective copper/low-k interconnect (BEOL) for 28nm CMOS technologies
- Rod Augur
- Craig Child
- et al.
- 2010
- ADMETA 2010
Conference paperCVD Co and its application to Cu damascene interconnections
- Takeshi Nogami
- J. Maniscalco
- et al.
- 2010
- IITC 2010
Conference paper