Publications

35 results for Shogo Mochizuki

Sub-10^-9 Ω-cm² n-Type Contact Resistivity for FinFET Technology
- - Hiroaki Niimi
  - Zuoguang Liu
  - et al.
- 2016
- IEEE Electron Device Letters
FINFET technology featuring high mobility SiGe channel for 10nm and beyond
- - Dechao Guo
  - G. Karve
  - et al.
- 2016
- VLSI Technology 2016
Selective GeO_x-scavenging from interfacial layer on Si_1-xGe_x channel for high mobility Si/Si_1-xGe_x CMOS application
- - Choonghyun Lee
  - H. Kim
  - et al.
- 2016
- VLSI Technology 2016
Formation of Si:CP layer through in-situ doping and implantation process for n-type metal-oxide-semiconductor devices
- - Shogo Mochizuki
  - Rainer Loesing
  - et al.
- 2014
- Thin Solid Films
Aggressively scaled strained silicon directly on insulator (SSDOI) FinFETs
- - A. Khakifirooz
  - R. Sreenivasan
  - et al.
- 2013
- S3S 2013