Reliable airgap BEOL technology in advanced 48 nm pitch copper/ULK interconnects for substantial power and performance benefits
- C. J. Penny
- S. Gates
- et al.
- 2017
- IITC 2017
Conference paper
Publications
17 results for S. Gates
Competitive and cost effective copper/low-k interconnect (BEOL) for 28 nm CMOS technologies
- R. Augur
- C. Child
- et al.
- 2012
- Microelectronic Engineering
PaperProcessing and moisture effects on TDDB for Cu/ULK BEOL structures
- E. Liniger
- T.M. Shaw
- et al.
- 2012
- Microelectronic Engineering
PaperDesigning porous ultra low-κ dielectrics to meet scaling challenges
- E. Todd Ryan
- Steve Gates
- et al.
- 2011
- ADMETA 2011
Conference paperOptimization of porous ultra low- dielectrics (κ≤ 2.55) for 28nm generation
- D. Kioussis
- E.T. Ryan
- et al.
- 2011
- IITC/MAM 2011
Conference paperProcessing and moisture effects on TDDB for Cu/ULK BEOL structures
- Eric G. Liniger
- T.M. Shaw
- et al.
- 2010
- ADMETA 2010
Conference paperCompetitive and cost effective copper/low-k interconnect (BEOL) for 28nm CMOS technologies
- Rod Augur
- Craig Child
- et al.
- 2010
- ADMETA 2010
Conference paperIntegration compatible porous SiCOH dielectrics from 45 to 22 nm
- S. Gates
- A. Grill
- et al.
- 2008
- ADMETA 2008
Conference paperThe effect of material and process interactions on BEOL integration
- T. Spooner
- J.C. Arnold
- et al.
- 2009
- ECS Meeting 2009
Conference paperOptimized interfacial strength for dense and porous SiCOH
- D.D. Restaino
- Steve Molis
- et al.
- 2007
- ADMETA 2007
Conference paper