Post-Si CMOS: III-V n-MOSFETs with high-k gate dielectrics
- Yanning Sun
- S.J. Koester
- et al.
- 2007
- CS MANTECH 2007
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42 results for Edward Kiewra
Enhancement-mode in0.70Ga0.30As-channel MOSFETs with ALD Al2O3
- Yanning Sun
- E.W. Kiewra
- et al.
- 2007
- DRC 2007
In-situ MBE Si as passivating interlayer on GaAs for HfO2 MOSCAP's: effect of GaAs surface reconstruction
- D.J. Webb
- J. Fompeyrine
- et al.
- 2007
- Microelectronic Engineering
Enhancement-mode buried-channel In0.7Ga0.3As/ In0.52Al0.48 MOSFETs with high-κ gate dielectrics
- Yanning Sun
- E.W. Kiewra
- et al.
- 2007
- IEEE Electron Device Letters
Investigation of FinFET devices for 32nm technologies and beyond
- H. Shang
- L. Chang
- et al.
- 2006
- VLSI Technology 2006
High mobility channels for ultimate CMOS
- D.K. Sadana
- S.J. Koester
- et al.
- 2006
- ECS Meeting 2006
Evidence of electron and hole inversion in GaAs metal-oxide-semiconductor capacitors with HfO 2 gate dielectrics and α-Si/SiO 2 interlayers
- S.J. Koester
- E.W. Kiewra
- et al.
- 2006
- Applied Physics Letters
Electromigration in AlCu lines: Comparison of Dual Damascene and metal reactive ion etching
- R. Filippi
- M. Gribelyuk
- et al.
- 2001
- Thin Solid Films
New aqueous clean for aluminum interconnects: Part II. Applications
- R. Ravikumar
- D.L. Rath
- et al.
- 2000
- Diffusion and Defect Data Pt.B: Solid State Phenomena
New aqueous clean for aluminum interconnects: Part I. Fundamentals
- D.L. Rath
- R. Ravikumar
- et al.
- 2000
- Diffusion and Defect Data Pt.B: Solid State Phenomena