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Quantum Information Processing
Integration of Ge as the p-FET channel material for 22 nm and beyond technology nodes is receiving increasing attention. Furthermore, there is a growing consensus in the CMOS industry that III-Vs channels for n-FETs should be closely evaluated. This review examines choices for Ge integration with Si, and describes recent results from III-V channels with a high-k/metal gate stack. copyright The Electrochemical Society.
Mark A. Eriksson, Mark Friesen, et al.
Quantum Information Processing
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